SIMS 4550

High-resolution, ultra low energy SIMS for semiconductors and insulators.

• Status: Active
• Country: France
• Isotopic: Yes
• Elemental: Yes
• Type of measurable elements: Most of elements, isotopes, and molecular species
• Measurable isotopes/elements: B, As, Al, Si, Ge, N, O, H, etc.
• Analyzer type : Quadrupole MS (single)
• Ion source type: FLI – Floating Low-energy Ion Gun with Cs⁺ and O₂⁺
• Inlet types: Direct sample loading
• Mass range : 1–2000 m/z
• High Resolution : Yes
• Sensitivity : 1–100 ppb, depending on matrix and conditions
• Abundance sensitivity : High abundance sensitivity; demonstrated in Al/SiO₂ profiles
• Dynamic range : 6–7 orders of magnitude in a single profile
• Detection limits : ppb to ppt range
• Precision : <1% dose precision for B and As; <1% beam current variation
• Detector type : Dual detection: Faraday and EM
• Primary beam : Cs⁺ and O₂⁺ (adjustable sputter angle, low energy)
• Vacuum system : Dual turbo and forepump, high vacuum compatible