Specifications

  • Category: Electron Microscopy
  • Technique: Scanning Electron Microscopy
  • Manufacturer: TESCAN
  • Country: Czechia
  • Available: Active
All specifications

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Short description

Xe plasma FIB and field-free UHR-SEM for large-scale, Ga-free, multimodal analysis

Specifications

Xe plasma FIB and field-free UHR-SEM for large-scale, Ga-free, multimodal analysis

  • Status: Active
  • Country: Czechia
  • Electron gun type : Schottky FEG
  • Standard detectors : In-column SE and BSE, chamber-mounted SE and BSE
  • Optional detectors : EDS, EBSD, WDS, TOF-SIMS, Raman, Rocking Stage, Rainbow CL
  • Cryo : Optional
  • FIB: Yes
  • STEM : Yes
  • STEM parameters: STEM resolution: 0.8 nm @ 30 keV; EBSD-optimized with Rocking Stage
  • Additional analytical capabilities (EDS/EDX ; EELS; SAED;NBD; others) : EDS, EBSD, WDS, TOF-SIMS, Rocking Stage, microanalysis, multi-modal tomography
  • Electron optics : BrightBeam UHR-SEM with field-free column, large FOV and In-Flight Beam Tracing
  • Resolution : 0.8 nm @ 30 keV STEM; 0.9 nm @ 15 keV; 1.5 nm @ 1 keV; 1.3 nm @ 1 keV (BDM)
  • Optical column : BrightBeam field-free column, In-Flight Beam Tracing, optimized for EBSD/EDS
  • Electron beam resolution : 0.8–1.5 nm depending on mode; STEM: 0.8 nm @ 30 keV
  • Beam current : Up to 400 nA
  • Accelerating voltage : 50 eV – 30 keV
  • Image parameters : 16k × 16k, overview and WideField modes, 50 mm FOV
  • Magnification : Max FOV: 50 mm @ WD = 70 mm
  • Chamber : 340 mm W × 315 mm D, 20+ ports, active suspension, includes extensions for 6", 8", 12" wafers and Raman integration
  • Camera details : Dual IR cameras, live chamber view, integrated overview imaging
  • Stage parameters : 5-axis compucentric; X/Y: 130 mm, Z: 90 mm, Tilt: –60° to +90°, supports large sample volume navigation
  • Holder Types : STEM holders (up to 8 grids), lamella, mechanical tests, EBSD cradle plus high-volume prep with Rocking Stage for curtaining reduction
  • Sample size: Max height 90 mm (132 mm w/o rotation), large wafer extensions; optimized for large cross-sections (1 mm width)
  • Aberration Correction type : Beam deceleration optimization for high current EBSD
  • Cooling system : -; supports stable low-kV ops
  • Vacuum system : High vacuum <9×10⁻³ Pa; low vacuum 7–500 Pa; all oil-free
  • Power Requirements and Consumption : 231 V ±10%, 50 Hz, 2300 VA, 2 kW UPS included
  • Environmental requirements : 17–24 °C, <65% RH, <10 µm/s vibration, <60 dBC, magnetic <300 nT
  • Vibration, Magnetic, Noise tolerance : <10 µm/s <30 Hz; <20 µm/s >30 Hz; <60 dBC; <300 nT sync field
  • Dimensions and Weight: Footprint: minimum 4.2 × 3.1 m; door width ≥1.0 m

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VEGA Compact

  • Category: Electron Microscopy
  • Technique: Scanning Electron Microscopy
  • Manufacturer: TESCAN
  • Country: Czechia
  • Available: Active
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