Specifications

  • Category: Electron Microscopy
  • Technique: Scanning Electron Microscopy
  • Manufacturer: ZEISS Microscopy
  • Country: Germany
  • Available: Active
All specifications

About

Short description

Compact SEM with analytical capabilities and chamber flexibility. Suitable for routine analysis and high throughput applications.

Specifications

Compact SEM with analytical capabilities and chamber flexibility. Suitable for routine analysis and high throughput applications.

  • Status: Active
  • Country: Germany
  • Electron gun type : Extreme FEG
  • Electron gun type : W Thermionic source
  • Electron gun type : LaB₆ Thermionic source
  • Standard detectors : ETSE detector
  • Optional detectors : HD BSD, VPSE, EPSE, EDS, WDS, EBSD, CL, STEM
  • Cryo : Optional
  • STEM : Optional
  • STEM parameters: STEM detector for thin section imaging
  • Additional analytical capabilities (EDS/EDX ; EELS; SAED;NBD; others) : EDS, WDS, EBSD, CL, STEM, Raman
  • Electron optics : Tungsten, LaB₆, or HD Schottky FE electron sources
  • Resolution : 1.9–20 nm at30 kV depending on source and mode
  • Electron beam resolution : 1.9–20 nm
  • Beam current : 0.5 pA to 5 µA
  • Accelerating voltage : 0.2–30 kV
  • Image parameters : SE, BSE, MIX, Shadow, TOPO, 3D
  • Magnification : <7–1,000,000×
  • Chamber : Ø310×220 mm
  • Camera details : CCD for Raman spectroscopy (optional)
  • Stage parameters : X: 80 mm, Y: 100 mm, Z: 35 mm, T: –10° to 90°, R: 360° (continuous)
  • Holder Types : Standard and optional specialty holders
  • Sample size: Max height 100 mm
  • Cooling system : No water cooling required
  • Vacuum system : Variable pressure 10–400 Pa (MA), 10–3000 Pa (LS)
  • Power Requirements and Consumption : 100–240 V, 50/60 Hz, single phase

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Sigma​ 500

  • Category: Electron Microscopy
  • Technique: Scanning Electron Microscopy
  • Manufacturer: ZEISS Microscopy
  • Country: Germany
  • Available: Active
Detailed