SU9000II

Cold FE SEM with in-lens objective lens for sub-nanometer imaging. Equipped with STEM, EELS, and dual-screen automation. Designed for advanced material and semiconductor analysis.

• Status: Active
• Country: Japan
• Electron gun type : Cold FEG
• Standard detectors : SE, BF-STEM, DF-STEM, top detector, upper detector
• Optional detectors : EDS, EELS, STEM holder, deceleration holder
• Cryo : Optional
• STEM : Yes
• STEM parameters: BF/DF Duo-STEM, EELS, lattice imaging
• Additional analytical capabilities (EDS/EDX ; EELS; SAED;NBD; others) : EDS, EELS, STEM, lattice imaging, EM Flow Creator
• Electron optics : Cold FE source, in-lens objective, 3-stage lens, electrostatic scan, high rigidity frame
• Resolution : SE: 0.4 nm at30 kV, STEM: 0.34 nm lattice
• Optical column : In-lens low-aberration column
• Electron beam resolution : 0.4 nm (SE) to 1.0 nm (STEM)
• Accelerating voltage : 0.5–30 kV
• Image parameters : SE, BSE, STEM BF/DF, EELS, mixed mode
• Magnification : 80–10,000× (LM), 800–3,000,000× (HM)
• Chamber : Max. 5.0×9.5×3.5 mm (specimen), ultrahigh vacuum
• Camera details : 640×480 to 5,120×3,840 and 40,960×30,720
• Stage parameters : X: ±4.0 mm, Y: ±2.0 mm, Z: ±0.3 mm, Tilt: ±40°
• Holder Types : Standard holder, cross section holder, double tilt holder
• Sample size: Up to 5.0×9.5×3.5 mm or 2.0×6.5×5.0 mm
• Aberration Correction type : Low-aberration in-lens objective lens
• Cooling system : Dedicated cooling system, 0.6–1.0 L/min, 15–20 °C
• Vacuum system : Dry pump, ultrahigh vacuum
• Power Requirements and Consumption : 5 kVA, AC100–240 V
• Environmental requirements : 15–25 °C, ≤60% RH
• Vibration, Magnetic, Noise tolerance : Acoustic enclosure, high rigidity frame
• Dimensions and Weight: Main unit: 1,140×1,110×1,860 mm, 670 kg