DB550

FIB-SEM with Ga+ ion source, SuperTunnel optics, nanomanipulation, gas injection, and in-situ SEM metrology

• Status: Active
• Country: China
• Electron gun type : Schottky FEG
• Standard detectors : ETD, In-lens, Retractable BSED, STEM
• Optional detectors : STEM, EDS, EBSD, nano-manipulator, GIS
• FIB: Yes
• STEM : Yes
• STEM parameters: BF/DF/HAADF imaging; IC chip and alloy STEM views shown
• Additional analytical capabilities (EDS/EDX ; EELS; SAED;NBD; others) : TEM prep, EBSD, EDS, SIMS
• Electron optics : SuperTunnel column; electromagnetic & electrostatic combo objective lens
• Resolution : 0.9 nm @ 15 kV SE; 1.6 nm @ 1.0 kV SE; 3 nm @ 30 kV ion beam
• Optical column : SuperTunnel optics; in-column beam deceleration
• Electron beam resolution : 0.9 nm – 1.6 nm (electron); 3 nm (ion)
• Beam current : 1 pA – 65 nA (ion beam)
• Accelerating voltage : 20 – 30 kV (electron); 0.5 – 30 kV (ion)
• Image parameters : Integrated SEM metrology, live image panel, multiple detector modes
• Chamber : Internally mounted with integrated control system
• Camera details : 3 cameras (optical nav + 2 chamber)
• Stage parameters : Piezoelectric 3-axis; motion accuracy ≤10 nm; speed 2 mm/s
• Holder Types : 4” & 8” holders; lift-out for TEM lamella
• Sample size: Up to 8 inches with loadlock
• Aberration Correction type : SuperTunnel optics: low aberration, magnetic-free lens
• Cooling system : Water-cooled objective lens
• Vacuum system : Fully automated, oil-free vacuum system
• Vibration, Magnetic, Noise tolerance : Vibration suppression via enclosure, magnetic tolerance designed